SK hynix Wins 'Partner of the Year Award' for Two Consecutive Years for HBM5·CoWoS Collaboration with TSMC

SK hynix is strengthening its cooperative relationships with global semiconductor ecosystem partners by showcasing its next-generation AI memory product lineup. SK hynix participated in the 'TSMC Open Innovation Platform (OIP) Conference' held in Santa Clara, California, United States, and unveiled its next-generation memory portfolio, including HBM4 and SOCAMM2.

Exhibition of Next-Generation HBM4 and SOCAMM2 Equipped with NVIDIA 'Vera Rubin'

Under the slogan 'The Memory behind the Intelligence at Scale,' SK hynix presented layered memory solutions that support AI computation and data storage at this exhibition. The exhibition space was divided into HBM and AI-Optimized Memory & Storage.

In the HBM exhibition area, SK hynix's HBM4 36GB 12-layer product and 96GB SOCAMM2 product, which are equipped alongside NVIDIA's superchip 'Vera Rubin', were unveiled. The HBM4 36GB 12-layer product is designed to be directly integrated around the Rubin GPU core to resolve data transfer latency, while the SOCAMM2 acts as the main system memory for the Vera CPU, helping with the complex computations and data movement of AI agents. In addition, major lineups such as HBM4E 48GB 12-layer, HBM4 48GB 16-layer, and HBM3E 36GB 12-layer were also exhibited.

Expanding AI Infrastructure Lineup from Server DRAM to Liquid-Cooling Supported SSDs

Server memory and storage products targeting the AI infrastructure market also appeared in large numbers. In the server DRAM sector, the '256GB 3DS RDIMM', which has the largest capacity in the industry, was introduced along with the high-bandwidth '128GB MRDIMM' and the '64GB RDIMM' applying 10nm-class 6th generation processes.

In the storage field, an SSD lineup covering various form factors was unveiled. In particular, the 'PEB210 E1.S' product, which supports liquid cooling (DLC) to increase the cooling efficiency of data centers, drew attention, and the 'PS1101 E3.S', an eSSD developed based on QLC for the first time by SK hynix, also attracted interest from enterprise customers.

Winning 'Partner of the Year Award' for HBM5-CoWoS Collaboration Achievements with TSMC

At this conference, SK hynix received the 'Partner of the Year Award' in the '3DFabric-HBM Integration' field from TSMC. This is the second consecutive year of winning, following last year. SK hynix explained that it was recognized for its collaborative achievement in verifying HBM5 based on TSMC's packaging technology, CoWoS, for the advancement of next-generation AI systems. The two companies have been conducting joint verification from the early stages to ensure a close connection between packaging technology and memory.

Specific outlooks for the technology roadmap were also presented. Park Dae-sik, a team leader at SK hynix, analyzed during the presentation session, "As AI infrastructure expands, the PCIe-based eSSD market is expected to grow approximately 3.8 times from 509EB in 2026 to 1,933EB in 2030." He continued, "For the 6th and 7th generation PCIe, we are preparing next-generation SSD solutions based on chiplets," adding, "Through a structure that separates the existing single-chip controller into chiplet units and connects them to UCIe, we expect to achieve reduced development periods, capacity expansion, and power optimization."

SK hynix stated that through this award, it has confirmed the collaborative achievements built with TSMC and plans to continue collaborating with various partners to build the memory solutions required in the AI era.